Selective etching of (111)B-oriented $A{l}_{x}G{a}_{1-x}As$-layers for epitaxial lift-off

Tobias Henksmeier, Martin Eppinger, Bernhard Reineke +3

GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing…