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T. Henksmeier

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1
  • physics.app-ph1

identity via Semantic Scholar / OpenAlex

most citedSelective etching of (111)B-oriented Alx​Ga1−x​As-layers for epitaxial lift-off

1 citations · 1 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2024

Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy

T. Henksmeier, P. Mahler, A. Wolff +7

We report on the low-temperature fabrication (300°C) of ultrathin 2D amorphous carbon layers on III-V semiconductors by plasma-enhanced chemical vapor deposition as a universal t…

cond-mat.mes-hall2021

Extremely low energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/GaAlAs heterostructures

Mahdi Hajlaoui, Stefano Ponzoni, Michael Deppe +6

Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvem…

physics.app-ph2021★ 1 cited

Selective etching of (111)B-oriented Alx​Ga1−x​As-layers for epitaxial lift-off

Tobias Henksmeier, Martin Eppinger, Bernhard Reineke +3

GaAs-(111)-nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift-off employing…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.