3 papers
cond-mat.mes-hall2026
Gate induced strain on a two-dimensional hole gas in silicon
D. van der Bovenkamp, C. S. A. Müller, B. D. Pantiru +7
We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate t…
cond-mat.supr-con2025
Time-reversal symmetry breaking in microscopic single-crystal SrRuO devices
Remko Fermin, Matthijs Rog, Guido Stam +6
Time-reversal symmetry breaking superconductivity is a quintessential unconventional quantum state. In Josephson junctions, time-reversal symmetry breaking manifests itself in the…
cond-mat.mes-hall2025
Quantum transport in SnTe nanowire devices
Femke J. Witmans, Mathijs G. C. Mientjes, Maarten J. G. Kamphuis +9
We report on a variety of quantum transport experiments in SnTe nanowire devices. Research on these particular nanowire devices is relevant because of their topological properties…