collaborators

1 paper

cond-mat.mes-hall2026

Gate induced strain on a two-dimensional hole gas in silicon

D. van der Bovenkamp, C. S. A. Müller, B. D. Pantiru +7

We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate t…