17 citations · 34 across the 10 of their papers we have counts for
10 papers
Deterministic nanofabrication for engineering nanowire quantum dot devices
Tarun Patel, Matteo Pennacchietti, Greg Holloway +8
Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Sit…
Magnetotransport Spectroscopy of Strongly Rashba-Split Hole Subbands Reveals Many-Body Interactions
F. Sfigakis, N. A. Cockton, M. Korkusinski +13
We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/Al…
Enhanced effective masses, spin-orbit polarization, and dispersion relations in 2D hole gases under strongly asymmetric confinement
N. A. Cockton, F. Sfigakis, M. Korkusinski +13
The dispersion of Rashba-split heavy-hole subbands in GaAs two-dimensional hole gases (2DHGs) is difficult to access experimentally because strong heavy-hole-light-hole mixing prod…
Electroluminescence in dopant-free GaAs/AlGaAs single heterojunctions: 2D free excitons, H-band, and the tidal effect
N. Sherlekar, S. R. Harrigan, L. Tian +9
Bright electroluminescence (EL) from dopant-free ambipolar lateral p-n junctions in GaAs/AlGaAs single heterointerface (SH) heterostructures is used to probe neutral free excitons…
Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor
S. R. Harrigan, F. Sfigakis, L. Tian +7
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate vol…
Stable electroluminescence in ambipolar dopant-free lateral p-n junctions
Lin Tian, Francois Sfigakis, Arjun Shetty +11
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use in quantum optoelectronics (e.g., optical quantum computers…
Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides
Daniel H. G. Espinosa, Stephen R. Harrigan, Kashif M. Awan +2
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization…
Optical observation of single spins in silicon
A. T. K. Kurkjian, D. B. Higginbottom, C. Chartrand +18
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter i…
Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
B. Buonacorsi, F. Sfigakis, A. Shetty +7
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allow…
Tunable Four-Wave Mixing in AlGaAs Waveguides of Three Different Geometries
Daniel H. G. Espinosa, Kashif M. Awan, Mfon Odungide +3
The AlGaAs material platform has been intensively used to develop nonlinear photonic devices on-a-chip, thanks to its superior nonlinear optical properties. We propose a new AlGaAs…