activity
20212026
most citedAnomalous electrochemical capacitance in Mott insulator titanium sesquioxide

11 citations · 21 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Strain-Enhanced Coherence in Curved hBN Quantum Emitters

Eyal Shoham, Sukanta Nandi, Ayelet Teitelboim +4

Hexagonal boron nitride (hBN) hosts robust room-temperature single-photon emitters, yet their coherence is typically limited by phonon induced dephasing and spectral broadening. He…

physics.optics2023

High-Index Topological Insulator Resonant Nanostructures from Bismuth Selenide

Sukanta Nandi, Shany Z. Cohen, Danveer Singh +4

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates…

physics.optics2023

Temperature Invariant Metasurfaces

Shany Zrihan Cohen, Danveer Singh, Sukanta Nandi +1

Thermal effects are well known to influence the electronic and optical properties of materials through several physical mechanisms and are the basis for various optoelectronic devi…

physics.optics2022

Deep-subwavelength resonant metaphotonics enabled by high-index topological insulator bismuth telluride

Danveer Singh, Sukanta Nandi, Yafit Fleger +2

In nanophotonics, small mode volumes, high-quality factor (Q) resonances, and large field enhancements without metals, fundamentally scale with the refractive index and are key for…

cond-mat.mtrl-sci2022★ 11 cited

Anomalous electrochemical capacitance in Mott insulator titanium sesquioxide

Sumana Kumar, Sukanta Nandi, Vikash Mishra +2

Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapac…

cond-mat.mes-hall2021★ 10 cited

Molecular Switching Operation in Gate Constricted Interface of MoS and hBN Heterostructure

Rahul Tripathi, Pritam Bhattacharyya, Sukanta Nandi +2

Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic cont…