most citedEffect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

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cond-mat.mtrl-sci2021★ 21 cited

Effect of High-k Dielectric Layer on 1/f Noise Behavior in Graphene Field-Effect Transistors

Yifei Wang, Vinh X. Ho, Zachary. N. Henschel +2

We report the 1/f noise characteristics at low-frequency in graphene field-effect transistors that utilized a high-k dielectric tantalum oxide encapsulated layer (a few nanometers…