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20212024
most citedCoexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

19 citations · 25 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2024

Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics

Bosai Lyu, Jiajun Chen, Sen Wang +21

Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic de…

cond-mat.mes-hall2023★ 6 cited

Quick Identification of ABC Trilayer Graphene at Nanoscale Resolution via a Near-field Optical Route

Peiyue Shen, Xianliang Zhou, Jiajun Chen +7

ABC-stacked trilayer graphene has exhibited a variety of correlated phenomena owing to its relatively flat bands and gate-tunable bandgap. However, convenient methods are still lac…

cond-mat.mes-hall2022

Catalytic growth of ultralong graphene nanoribbons on insulating substrates

Bosai Lyu, Jiajun Chen, Shuo Lou +22

Graphene nanoribbons (GNRs) with widths of a few nanometres are promising candidates for future nano-electronic applications due to their structurally tunable bandgaps, ultrahigh c…

cond-mat.mtrl-sci2021★ 19 cited

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

Yunlong Li, Zhao Ran, Chaozhi Huang +20

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have…

cond-mat.mes-hall2021

Quantum Capacitance Induced Non-Local Electrostatic Gating Effect in Graphene

Aolin Deng, Cheng Hu, Peiyue Shen +8

Electrostatic gating lies in the heart of modern FET-based integrated circuits. Usually, the gate electrode has to be placed very close to the conduction channel, typically a few n…