activity
20182024
most citedHigh-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

77 citations · 115 across the 7 of their papers we have counts for

collaborators

8 papers

physics.optics2024

Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Stephen A Church, Francesco Vitale, Aswani Gopakumar +9

Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most ch…

physics.optics2022★ 25 cited

Holistic nanowire laser characterization as a route to optimal design

Stephen Church, Nikesh Patel, Ruqaiya Al-Abri +4

Nanowire lasers are sought for near-field and on-chip photonic applications as they provide integrable, coherent and monochromatic radiation. A wavelength-scale nanowire acts as bo…

physics.optics2021★ 11 cited

Design of High-Quality Reflectors for Vertical Nanowire Lasers on Si

Xing Zhang, Hui Yang, Yunyan Zhang +1

Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers f…

cond-mat.mes-hall2021

Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires

Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5

Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…

cond-mat.mes-hall2021★ 2 cited

Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires

Aswathi K Sivan, Lorenzo Di Mario, Yunyan Zhang +6

Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the la…

cond-mat.mes-hall2020

Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer

Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14

Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…

physics.app-ph2020

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…

cond-mat.mes-hall2018★ 77 cited

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

Hassan Ali, Yunyan Zhang, Jing Tang +13

Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form…