5 papers
Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires
Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…
Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires
Aswathi K Sivan, Lorenzo Di Mario, Yunyan Zhang +6
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the la…
Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…
High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire
Hassan Ali, Yunyan Zhang, Jing Tang +13
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form…