10 citations · 19 across the 8 of their papers we have counts for
Showing 2021Show all
2 papers · 1 filter
cond-mat.mes-hall2021
Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Lukas Stampfer, Damon J. Carrad, Dags Olsteins +4
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments base…
cond-mat.mtrl-sci2021★ 1 cited
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…