activity
20202025
most citedEpitaxial Pb on InAs nanowires

86 citations · 146 across the 12 of their papers we have counts for

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8 papers · 1 filter

cond-mat.mes-hall2025

Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires

Giulia Meucci, Dags Olšteins, Damon J. Carrad +6

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…

cond-mat.mes-hall2025

: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices

Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…

cond-mat.mes-hall2023★ 10 cited

Cryogenic Multiplexing with Bottom-Up Nanowires

Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…

cond-mat.mes-hall2022

Electronic transport in double-nanowire superconducting islands with multiple terminals

Alexandros Vekris, Juan Carlos Estrada Saldaña, Thomas Kanne +7

We characterize in-situ grown parallel nanowires bridged by a superconducting island. The magnetic-field and temperature dependence of Coulomb blockade peaks measured across differ…

cond-mat.mes-hall2021★ 20 cited

Josephson junctions in double nanowires bridged by in-situ deposited superconductors

Alexandros Vekris, Juan Carlos Estrada Saldaña, Thomas Kanne +9

We characterize parallel double quantum dot Josephson junctions based on closely-grown double nanowires bridged by in-situ deposited superconductors. The parallel double dot behavi…

cond-mat.mes-hall2021

Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires

Lukas Stampfer, Damon J. Carrad, Dags Olsteins +4

Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments base…

cond-mat.mes-hall2021

Double nanowires for hybrid quantum devices

Thomas Kanne, Dags Olsteins, Mikelis Marnauza +8

Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andre…

cond-mat.mes-hall2020★ 86 cited

Epitaxial Pb on InAs nanowires

Thomas Kanne, Mikelis Marnauza, Dags Olsteins +8

Semiconductor-superconductor hybrids are widely used for realising complex quantum phenomena such as topological superconductivity and spins coupled to Cooper pairs. Accessing exot…