most citedEnhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer

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cond-mat.mtrl-sci2021

High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing

Ru Xu, Peng Chen, Jing Zhou +13

GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…