27 citations · 28 across the 7 of their papers we have counts for
4 papers · 1 filter
Cavity Plasmon: Enhanced Luminescence Effect on InGaN Light Emitting Diodes
Yuyin Li, Jing Zhou, Ziwen Yan +10
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create m…
Enhanced optical performance of GaN Micro-light-emitting diodes with a single porous layer
Ziwen Yan, Xianfei Zhang, Yuyin Li +8
High-efficiency micro-light-emitting diodes (Micro-LEDs) are key devices for next-generation display technology. However, when the mesa size is reduced to around tens of micrometer…
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Peng Chen, Zili Xie, Xiangqian Xiu +6
III-V nitride semiconductors, represented by GaN, have attracted significant research attention. Driven by the growing interest in smart micro-displays, there is a strong desire to…
Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles
Xiaokang Mao, Zhiguo Yu, Peng Che +11
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes hav…