12 citations · 17 across the 2 of their papers we have counts for
2 papers
physics.app-ph2022★ 5 cited
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
physics.app-ph2021★ 12 cited
Exploration of Gate Trench Module for Vertical GaN devices
M. Ruzzarin, K. Geens, M. Borga +9
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench,…