21 citations · 38 across the 3 of their papers we have counts for
3 papers
physics.app-ph2022★ 5 cited
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
physics.app-ph2021★ 21 cited
Vertical GaN Devices: Process and Reliability
Shuzhen You, Karen Geens, Matteo Borga +14
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…
physics.app-ph2021★ 12 cited
Exploration of Gate Trench Module for Vertical GaN devices
M. Ruzzarin, K. Geens, M. Borga +9
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench,…