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most citedReversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

24 citations · 48 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2011★ 24 cited

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Z. Q. Liu, D. P. Leusink, W. M. Lü +13

We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The swi…