45 citations · 50 across the 5 of their papers we have counts for
5 papers
Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature
Yuanke Zhang, Yuefeng Chen, Yifang Zhang +3
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain (). In this paper, we characterize lateral bipolar junction…
Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications
Bolun Zeng, Haochen Zhang, Zikun Xiang +9
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Characterization and Modeling of Native MOSFETs Down to 4.2 K
Yuanke Zhang, Tengteng Lu, Wenjie Wang +4
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
Yuanke Zhang, Chao Luo, Tengteng Lu +3
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (H…