activity
19962026
most citedPolarons in Wurtzite Nitride Semiconductors

14 citations · 16 across the 6 of their papers we have counts for

collaborators

6 papers

physics.geo-ph2026

Thermodynamic criticality in seismicity: Uniqueness of surface-energy scaling in the fragment-asperity model

O. Sotolongo-Costa, A. V. Mora-Rodríguez, M. E. Mora-Ramos

We propose that a linear relation between the energy of stress-bearing interactions and the surface of contact within the fragment-asperity model for earthquakes. It reveals as the…

physics.geo-ph2025

Role of non-extensivity -parameter in tectonic seismic forecasting

Oscar Sotolongo-Costa, Miguel Eduardo Mora-Ramos

By writing total Tsallis entropy as a function of non-extensivity q-parameter withing the fragment-asperity model for earthquakes, a critical range of values is identified: 1.4 <q<…

cond-mat.mtrl-sci2021

The infuence of compressive lattice deformations on the zone-center energy band properties of zincblende GaN and InN. Hybrid density functional results

Julián David Correa, Miguel Eduardo Mora-Ramos

We have investigated the effects of hydrostatic pressure and compressive biaxial strain on the -point energy states of GaN and InN with zincblende crystal structure via first-pr…

cond-mat.stat-mech2014★ 2 cited

A nonextensive statistical model of multiple particle breakage

Oscar Sotolongo-Costa, Luis Manuel Gaggero-Sager, Miguel Eduardo Mora-Ramos

A time-dependent statistical description of multiple particle breakage is presented. The approach combines the Tsallis non-extensive entropy with a fractal kinetic equation for the…

cond-mat.mtrl-sci1998★ 14 cited

Polarons in Wurtzite Nitride Semiconductors

M. E. Mora-Ramos, F. J. Rodriguez, L. Quiroga

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy.…

cond-mat1996

Polar optical phonons at interfaces: influence of the concentration of Al

A. E. Chubykalo, D. A. Contreras-Solorio, M. E. Mora-Ramos

We study long-wavelength polar optical modes at semiconductor interfaces of GaAs|Al_{(x)}Ga_{(1-x)}As and take into account influence of the Al concentration. We have considered tw…