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Mario Lanza

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1
  • last author1

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • eess.SP1
  • physics.app-ph1
ORCID 0000-0003-4756-8632

identity via Semantic Scholar / OpenAlex

most citedVariability in Resistive Memories

194 citations · 209 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2024★ 12 cited

Modeling the variability of memristive devices with hexagonal boron nitride as dielectric

Juan B. Roldan, David Maldonado, C. Aguilera-Pedregosa +6

Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cyc…

physics.app-ph2024★ 194 cited

Variability in Resistive Memories

Juan B. Roldán, Enrique Miranda, David Maldonado +17

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, ha…

eess.SP2024★ 3 cited

Roadmap to Neuromorphic Computing with Emerging Technologies

Adnan Mehonic, Daniele Ielmini, Kaushik Roy +50

The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently util…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.