activity
19972004
most citedRecombination and Lifetimes of Charge Carriers in Semiconductors

63 citations · 194 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.soft2004★ 63 cited

Recombination and Lifetimes of Charge Carriers in Semiconductors

I. N. Volovichev, G. N. Logvinov, O. Yu. Titov +1

In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell's electrodynamics. Self-co…

cond-mat2002★ 25 cited

New physical principles of contact thermoelectric cooling

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov +1

We suggest a new approach to the theory of the contact thermoelectric cooling (Peltier effect). The metal-metal, metal-n-type semiconductor, metal-p-type semiconductor, p-n junctio…

cond-mat2002★ 47 cited

The Role of Non-Equilibrium Carriers in Formation of Thermo-E.M.F. in Bipolar Semiconductors

Yu. G. Gurevich, G. N. Logvinov, I. N. Volovichev +3

A new approach to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers, is presented. The role of non-equilibrium carriers, as well as surface…

cond-mat2002★ 12 cited

Recombination in Semiconductors: Appearance of Non-equilibrium Carriers due to Injection or Redistribution in the Sample

I. N. Volovichev, G. Espejo, Yu. G. Gurevich +2

It is shown that the traditional approach for consideration of recombination under condition of steady-state current in the absence of external carrier generation is internally con…

cond-mat.mtrl-sci2002★ 47 cited

Boundary Conditions in an Electric Current Contact

O. Yu. Titov, J. Giraldo, Yu. G. Gurevich

In most electronic devices, electric current of both types (electrons and holes) flows through a junction. Usually the boundary conditions have been formulated exclusively for open…

cond-mat1997

Theory of thermoelectric effects when the temperature approximation is incorrect

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov

The flow of a thermoelectric current through a semiconductor of submicron dimensions is analyzed. The rate of surface relaxation of the energy is assumed to be much higher than the…