activity
19972004
most citedRecombination and Lifetimes of Charge Carriers in Semiconductors

63 citations · 152 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.soft2004★ 63 cited

Recombination and Lifetimes of Charge Carriers in Semiconductors

I. N. Volovichev, G. N. Logvinov, O. Yu. Titov +1

In this Communication, it is shown that models used for describing generation and recombination of electrons and holes lead to disagreements with Maxwell's electrodynamics. Self-co…

cond-mat2002★ 10 cited

Electron and Phonon Temperature Relaxation in Semiconductors Excited by Thermal Pulse

Yu. G. Gurevich, G. N. Logvinov, A. F. Carballo-Sanchez +2

Electron and phonon transient temperatures are analyzed in the case of nondegenerate semiconductors. An analytical solution is obtained for rectangular laser pulse absorption. It i…

cond-mat2002★ 7 cited

"Resonance" phenomena in thermal diffusion processes in two-layer structures

Yu. G. Gurevich, G. N. Logvinov, N. Munoz-Aguirre +1

The dependence on chopper frequency of the effective thermal diffusivity and effective thermal conductivity in photoacoustic experiments is discussed. The theoretical model of a tw…

cond-mat2002★ 25 cited

New physical principles of contact thermoelectric cooling

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov +1

We suggest a new approach to the theory of the contact thermoelectric cooling (Peltier effect). The metal-metal, metal-n-type semiconductor, metal-p-type semiconductor, p-n junctio…

cond-mat2002★ 47 cited

The Role of Non-Equilibrium Carriers in Formation of Thermo-E.M.F. in Bipolar Semiconductors

Yu. G. Gurevich, G. N. Logvinov, I. N. Volovichev +3

A new approach to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers, is presented. The role of non-equilibrium carriers, as well as surface…

cond-mat1997

Theory of thermoelectric effects when the temperature approximation is incorrect

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov

The flow of a thermoelectric current through a semiconductor of submicron dimensions is analyzed. The rate of surface relaxation of the energy is assumed to be much higher than the…

cond-mat1997

Spatially nonuniform energy distribution of electrons in a submicron semiconductor film

Yu. G. Gurevich, G. N. Logvinov, O. Yu. Titov

The symmetric part of the distribution of the electrons in a semiconductor submicron film, placed between a heater and refrigeration unit, is derived and analyzed. It is shown that…