1 citations · 1 across the 6 of their papers we have counts for
6 papers
Enhancement of interlayer exciton emission in a TMDC heterostructure via a multi-resonant chirped microresonator up to room temperature
Chirag C. Palekar, Barbara Rosa, Niels Heermeier +5
We report on multi-resonance chirped distributed Bragg reflector (DBR) microcavities. These systems are employed to investigate the light-mater interaction with both intra- and int…
Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method
Imad Limame, Ching-Wen Shih, Alexej Koltchanov +8
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried st…
Twist Angle Dependence of Exciton Resonances in WSe/MoSe Moiré Heterostructures
Chirag Chandrakant Palekar, Joakim Hagel, Barbara Rosa +7
Van der Waals heterostructures based on TMDC semiconducting materials have emerged as promising materials due to their spin-valley properties efficiently contrived by the stacking-…
High- lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
Kartik Gaur, Ching-Wen Shih, Imad Limame +6
We report an easy-to-fabricate microcavity design to produce optically pumped high- quantum dot microlasers. Our cavity concept is based on a buried photonic-defect for tight la…
Temperature dependent temporal coherence of metallic-nanoparticle-induced single-photon emitters in a WSe monolayer
Martin von Helversen, Lara Greten, Imad Limame +7
In recent years, much research has been undertaken to investigate the suitability of two-dimensional materials to act as single-photon sources with high optical and quantum optical…
Optical characteristics of cavity structures with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and In0.37Ga0.63As quantum dots as the active region
Bartosz Kamiński, Agata Zielińska, Anna Musiał +5
We characterized optically In0.37Ga0.63As/GaAs quantum dots and Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflector based cavities. The main mechanisms of quantum dots photolumin…