2 papers
cond-mat.mtrl-sci2026
Monolithic GaN Systems Combining Non-Volatile Memory and Analog Computing via Area-Ratio-Engineered Ferroelectric AlScN Gate Stacks
Hyeong Jun Joo, Jong Min Park, Kieran Barrett-Snyder +2
Gallium nitride (GaN) transistors have become the platform of choice for power electronics and radio-frequency power amplifiers. To unlock capabilities beyond those of conventional…
cond-mat.mtrl-sci2025
Ferroelectricity of Wurtzite AlHfN Heterovalent Alloys
Nate S. P. Bernstein, Daniel Drury, Cheng-Wei Lee +11
Thin films of aluminum hafnium nitride (AlHfN) were synthesized via reactive magnetron sputtering for Hf contents up to = 0.13. X-ray diffraction showed a single…