4 papers
High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
Constance Lainé, Giovanni A. Oakes, Virginia Ciriano-Tejel +9
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensit…
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
I. Fattal, J. Van Damme, B. Raes +14
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly us…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Kuan-Chu Chen, Clement Godfrin, George Simion +8
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…