2 papers
cond-mat.mtrl-sci2026
Domain-Growth Kinetics and Scaling Laws Governing Pulse-Driven Accumulative Polarization Switching in HZO
Manish Anand, Balram Khattar, Abhishek Sharma
Accumulative polarization switching driven by sequential sub-coercive electric-field pulses offers a promising route toward low-power ferroelectric memories and neuromorphic device…
cond-mat.mes-hall2025
Asymmetric Resonant Ferroelectric Tunnel Junctions for Simultaneous High Tunnel Electroresistance and Low Resistance-Area Product
Balram Khattar, Adarsh Tripathi, Manmohan Brahma +1
Ferroelectric tunnel junctions offer potential for non-volatile memory with low power, fast switching, and scalability, but their performance is limited by a high resistance-area p…