4 papers
Competing Chern states revealed by quasiparticle charging in moiré rhombohedral graphene
Hongyuan Li, Zuhan Geng, Junseok Seo +13
Moiré materials realize a versatile platform for exploring the physics of fractional Chern insulators (FCIs). The recently observed evolution from FCIs to an extended quantum anom…
Nonvolatile Switching of Magnetism via Gate-Induced Sliding in Tetralayer Graphene
Daniel Brandon, Tixuan Tan, Yiwen Ai +7
Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arr…
Gate-tunable electroresistance in a sliding ferroelectric tunnel junction
Bozo Vareskic, Finn G. Kennedy, Takashi Taniguchi +3
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal b…
Band structure engineering using a moiré polar substrate
Xirui Wang, Cheng Xu, Samuel Aronson +11
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we…