collaborators

1 paper

cond-mat.mes-hall1998

Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

G. R. Facer, B. E. Kane, A. S. Dzurak +5

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without mo…