activity
19982025
most citedDesign considerations for table-top, laser-based VUV and X-ray free electron lasers

204 citations · 572 across the 31 of their papers we have counts for

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11 papers · 1 filter

physics.acc-ph2024

Planar channeling of 855 MeV electrons in a boron-doped (110) diamond undulator -- a case study

H. Backe, W. Lauth, P. Klag +1

A 4-period diamond undulator with a thickness of 20 m was produced with the method of Chemical Vapour Deposition (CVD), applying boron doping, on a straight diamond crystal with…

physics.acc-ph2024★ 1 cited

Observation of Fine Structure in Channeling of Particles in Bent Crystals

A. Mazzolari, H. Backe, L. Bandiera +14

We observed highly efficient manipulation of the 530 MeV positron beam at Mainz Microtron via bent crystals. The low beam divergence revealed a fine structure in the angular distri…

physics.acc-ph2022★ 9 cited

Design study for a 500 MeV positron beam at the Mainz Microtron MAMI

H. Backe, W. Lauth, P. Drexler +4

A design study has been performed for a positron beam with an energy of 500 MeV to be realized at the applied physics area of the Mainz Microtron MAMI. Positrons will be created af…

physics.acc-ph2020★ 21 cited

Investigation on radiation generated by Sub-GeV electrons in ultrashort Si and Ge bent crystals

L. Bandiera, A. Sytov, D. De Salvador +16

We report on the measurements of the spectra of gamma radiation generated by 855 MeV electrons in bent silicon and germanium crystals at MAMI (MAinzer MIkrotron). The crystals were…

physics.acc-ph2020★ 20 cited

Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

H. Backe, W. Lauth, T. N. Tran Thi

Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV. This observation motivated us to initiate decha…

physics.acc-ph2019★ 13 cited

Broad angular anisotropy of multiple scattering in a Si crystal

A. Mazzolari, A. Sytov, L. Bandiera +17

We observed reduction of multiple Coulomb scattering of 855 MeV electrons within a Si crystalline plate w.r.t. an amorphous plate with the same mass thickness. The reduction owed t…