30 citations · 52 across the 3 of their papers we have counts for
3 papers
physics.app-ph2022★ 10 cited
Study and characterization of GaN MOS capacitors: planar versus trench topographies
K. Mukherjee, C. De Santi, S. You +9
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…
physics.app-ph2021★ 30 cited
Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
A. Nardo, C. De Santi, C. Koller +5
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures.…
physics.app-ph2021★ 12 cited
Exploration of Gate Trench Module for Vertical GaN devices
M. Ruzzarin, K. Geens, M. Borga +9
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench,…