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Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
100 GHz Transistors from Wafer Scale Epitaxial Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gat…
Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
Fengnian Xia, Damon B. Farmer, Yu-ming Lin +1
Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (F…