4 citations · 5 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2023★ 1 cited
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
cond-mat.mtrl-sci2022★ 4 cited
Efficient and accurate defect level modelling in monolayer MoS via GW+DFT with open boundary conditions
Guido Gandus, Youseung Lee, Leonard Deuschle +2
Within the framework of many-body perturbation theory (MBPT) integrated with density functional theory (DFT), a novel defect-subspace projection GW method, the so-called p-GW, is p…