Indirect-to-direct bandgap transition in few-layer $\beta$-InSe as probed by photoluminescence spectroscopy

Bogdan R. Borodin, Ilya A. Eliseyev, Aidar I. Galimov +4

InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure,…