most citedMOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

48 citations · 71 across the 2 of their papers we have counts for

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physics.app-ph2018★ 23 cited

N-polar AlN buffer growth by MOVPE for transistor applications

J. Lemettinen, H. Okumura, T. Palacios +1

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-e…

physics.app-ph2018★ 48 cited

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

J. Lemettinen, H. Okumura, I. Kim +4

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…