3 papers
physics.app-ph2018
N-polar AlN buffer growth by MOVPE for transistor applications
J. Lemettinen, H. Okumura, T. Palacios +1
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-e…
physics.app-ph2018
MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
J. Lemettinen, H. Okumura, I. Kim +4
We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high tem…
physics.app-ph2018
MOVPE growth of N-polar AlN on 4H-SiC: effect of substrate miscut on layer quality
J. Lemettinen, H. Okumura, I. Kim +3
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-…