activity
20182026
most citedAlScN: A III-V semiconductor based ferroelectric

842 citations · 966 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Beyond the Parasitic Limit: A Nanoprobing Framework for De-embedding Intrinsic Ferroelectric Properties at the Deep Sub-Micrometer Scale

Niklas Kyoushi, Georg Schönweger, Ole Gronenberg +4

The continued scaling of ferroelectric devices is critical for next-generation computing architectures, yet it is fundamentally challenged by a metrological bottleneck: at the deep…

cond-mat.mtrl-sci2025★ 2 cited

Wafer scale reactive sputtering of highly oriented and ferroelectric AlScN from 300 mm AlSc Targets

Tom-Niklas Kreutzer, Muhammad Zubair Ghori, Md Redwanul Islam +4

This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric AlScN thin films with very high Sc content. AlScN lay…

cond-mat.mtrl-sci2021★ 122 cited

On the exceptional temperature stability of ferroelectric AlScN thin films

MD Redwanul Islam, Niklas Wolff, Mohammed Yassine +7

Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. Thi…

cond-mat.mtrl-sci2020

Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films

Simon Fichtner, Georg Schönweger, Tom-Niklas Kreutzer +4

The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unpreceden…

cond-mat.mtrl-sci2018★ 842 cited

AlScN: A III-V semiconductor based ferroelectric

Simon Fichtner, Niklas Wolff, Fabian Lofink +2

Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand…