842 citations · 1.1k across the 9 of their papers we have counts for
9 papers
Effect of TiPd(Ni) on the Transformation Behavior in Sputtered Ti-rich TiNiPd Shape Memory Alloys
Lars Bumke, Niklas Wolff, Lorenz Kienle +1
TiNiPd based shape memory alloys (SMAs) share similar microstructural features as TiNiCu-based SMAs known for their exceptional resistance to functional fatigue due to their high c…
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
Niklas Wolff, Georg Schönweger, Redwanul Md. Islam +4
The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. Thi…
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline AlScN
Niklas Wolff, Georg Schoenweger, Isabel Streicher +10
Wurtzite-type AlScN solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickne…
In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…
Control of magnetoelastic coupling in Ni/Fe multilayers using He ion irradiation
Giovanni Masciocchi, Johannes Wilhelmus van der Jagt, Maria-Andromachi Syskaki +10
This study reports the effects of post-growth He irradiation on the magneto-elastic properties of a / multi-layered stack. The progressive intermixing caused by He…
Ultrathin AlScN for low-voltage driven ferroelectric-based devices
Georg Schönweger, Md Redwanul Islam, Niklas Wolff +4
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultr…
On the exceptional temperature stability of ferroelectric AlScN thin films
MD Redwanul Islam, Niklas Wolff, Mohammed Yassine +7
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. Thi…
AlScN: A III-V semiconductor based ferroelectric
Simon Fichtner, Niklas Wolff, Fabian Lofink +2
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand…