842 citations · 1.1k across the 9 of their papers we have counts for
10 papers
Beyond the Parasitic Limit: A Nanoprobing Framework for De-embedding Intrinsic Ferroelectric Properties at the Deep Sub-Micrometer Scale
Niklas Kyoushi, Georg Schönweger, Ole Gronenberg +4
The continued scaling of ferroelectric devices is critical for next-generation computing architectures, yet it is fundamentally challenged by a metrological bottleneck: at the deep…
Clarification of the Spontaneous Polarization Direction in Crystals with Wurtzite Structure
Simon Fichtner, Mohamed Yassine, Chris van de Walle +1
The wurtzite structure is one of the most frequently found crystal structures in modern semiconductors and its inherent spontaneous polarization is a defining materials property. D…
Wafer scale reactive sputtering of highly oriented and ferroelectric AlScN from 300 mm AlSc Targets
Tom-Niklas Kreutzer, Muhammad Zubair Ghori, Md Redwanul Islam +4
This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric AlScN thin films with very high Sc content. AlScN lay…
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline AlScN
Niklas Wolff, Georg Schoenweger, Isabel Streicher +10
Wurtzite-type AlScN solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickne…
The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN
Maike Gremmel, Simon Fichtner
This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage…
In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…
Ultrathin AlScN for low-voltage driven ferroelectric-based devices
Georg Schönweger, Md Redwanul Islam, Niklas Wolff +4
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultr…
On the exceptional temperature stability of ferroelectric AlScN thin films
MD Redwanul Islam, Niklas Wolff, Mohammed Yassine +7
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. Thi…
Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films
Simon Fichtner, Georg Schönweger, Tom-Niklas Kreutzer +4
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unpreceden…
AlScN: A III-V semiconductor based ferroelectric
Simon Fichtner, Niklas Wolff, Fabian Lofink +2
Ferroelectric switching is unambigiously demonstrated for the first time in a III-V semiconductor based material: AlScN -- A discovery which could help to satisfy the urgent demand…