activity
20182026
most citedElectron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

32 citations · 55 across the 6 of their papers we have counts for

collaborators

6 papers

quant-ph2026

Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system

Holly G. Stemp, Mark R. van Blankenstein, Benjamin Wilhelm +10

Recent experiments on donor-based spin qubits in silicon have leveraged the exchange interaction between electrons bound to separate donor nuclei to perform two-qubit operations. A…

quant-ph2025★ 4 cited

Operating two exchange-only qubits in parallel

Mateusz T. Mądzik, Florian Luthi, Gian Giacomo Guerreschi +38

Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays…

quant-ph2024

Short two-qubit pulse sequences for exchange-only spin qubits in 2D layouts

Jason D. Chadwick, Gian Giacomo Guerreschi, Florian Luthi +9

Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six…

quant-ph2024★ 1 cited

Fast quantum gates for exchange-only qubits using simultaneous exchange pulses

Irina Heinz, Felix Borjans, Matthew J. Curry +6

The benefit of exchange-only qubits compared to other spin qubit types is the universal control using only voltage controlled exchange interactions between neighboring spins. As a…

quant-ph2023★ 18 cited

Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Holly G. Stemp, Serwan Asaad, Mark R. van Blankenstein +19

Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum…

cond-mat.mes-hall2018★ 32 cited

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12

We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…