2 papers
cond-mat.mes-hall2018
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik +12
We analyze the electron spin relaxation rate of individual ion-implanted P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with…
cond-mat.mes-hall2017
Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon
Guilherme Tosi, Fahd A. Mohiyaddin, Stefanie Tenberg +2
The nuclear spin state of a phosphorus donor (P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensi…