30 citations · 83 across the 6 of their papers we have counts for
6 papers
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…
Effective temperature for hopping transport in a Gaussian DOS
F. Jansson, S. D. Baranovskii, F. Gebhard +1
For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the…
Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation
V. Rajevac, C. Boehme, C. Michel +4
Semi-analytical predictions for the transients of spin-dependent transport and recombination rates through localized states in semiconductors during coherent electron spin excitati…
Simulation of the phononless hopping in a Coulomb glass
J. Matulewski, S. D. Baranovskii, P. Thomas
The phononless hopping conductivity of a disordered system with localized states is studied in a broad range of frequencies by straightforward computer simulations taking into acco…
Fluctuation-Stimulated Variable-Range Hopping
V. I. Kozub, S. D. Baranovskii, I. Shlimak
Qualitatively new transport mechanism is suggested for hopping of carriers according to which the variable-range hopping (VRH) arises from the resonant tunneling between transport…
Novel Transport Mechanism for Interacting Electrons in Disordered Systems: Variable-Range Resonant Tunneling
S. D. Baranovskii, I. S. Shlimak
To interpret recent experimental observations of the phononless hopping conduction, we suggest a novel transport mechanism according to which the current-carrying single electrons…