activity
20122021
most citedMgSbBi family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature

130 citations · 238 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2021★ 36 cited

Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials

Rui Shu, Zhijia Han, Anna Elsukova +12

Solid-state precipitation can be used to tailor materials properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric propert…

cond-mat.mtrl-sci2018★ 130 cited

MgSbBi family: A promising substitute for the start-of-art n-type thermoelectric materials near room temperature

Rui Shu, Yecheng Zhou, Qi Wang +10

Bi2Te3-xSex family has been the n-type start-of-the-art thermoelectric materials near room temperatures (RT) for more than half-century, which dominates the active cooling and nove…

cond-mat.mtrl-sci2014

Anomalous CDW ground state in CuSe: a wave-like fluctuation of I-V curve near 50 K

Mengliang Yao, Weishu Liu, Xiang Chen +4

A charge density wave (CDW) ground state is observed in polycrystalline CuSe below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constan…

cond-mat.mes-hall2013★ 4 cited

Topological Effect of Surface Plasmon Excitation in Gapped Isotropic Topological Insulator Nanowires

Mingda Li, Wenping Cui, Lijun Wu +5

We present a theoretical investigation of the surface plasmon (SP) at the interface between topologically non-trivial cylindrical core and topological-trivial surrounding material,…

cond-mat.mtrl-sci2012★ 5 cited

Thermal Stability of Thermoelectric Materials via In Situ Resistivity Measurements

K. C. Lukas, W. S. Liu, Q. Jie +2

An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One…

cond-mat.mtrl-sci2012★ 22 cited

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Kevin C. Lukas, Weishu Liu, Zhifeng Ren +1

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric…

cond-mat.mtrl-sci2012★ 41 cited

Experimental Determination of the Lorenz Number in Cu0.01Bi2Te2.7Se0.3 and Bi0.88Sb0.12

K. C. Lukas, W. S. Liu, G. Joshi +5

Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally mea…