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cond-mat.mtrl-sci2008★ 1 cited
Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures
E. -K. Lee, D. J. Lockwood, J. -M. Baribeau +3
In a semiconductor heterostructure with type II energy band alignment, the spatial separation between electrons and holes slows down their radiative recombination. With increasing…
cond-mat.mtrl-sci1998
Observation of Geometry-Limited Mobility in Porous Silicon
P. N. Rao, E. A. Schiff, L. Tsybeskov +1
We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very smal…