Decoupling the effects of composition and strain on the vibrational modes of GeSn

Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1

We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…