A. Drozdziel

most citedStrain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

23 citations · 23 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2026

Molecular Nitrogen Formation in Nitrogen-Implanted (100) $β - G a_{2} O_{3}$ Revealed by Temperature-Dependent $N$ $K$ -edge XANES

I. N. Demchenko, Y. Syryanyy, A. Shokri +13

The realization of $p$ -type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in $β - G a_{2} O_{3}$ where nitrogen has long been considered a potential…

cond-mat.mtrl-sci2019★ 23 cited

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Slawomir Prucnal, Yonder Berencén, Mao Wang +19

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…

Molecular Nitrogen Formation in Nitrogen-Implanted (100) β−Ga2​O3​ Revealed by Temperature-Dependent N K-edge XANES

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Molecular Nitrogen Formation in Nitrogen-Implanted (100) $β - G a_{2} O_{3}$ Revealed by Temperature-Dependent $N$ $K$ -edge XANES