activity
20182021
most citedThermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties

32 citations · 58 across the 4 of their papers we have counts for

collaborators

5 papers

physics.optics2021★ 1 cited

A photonic platform hosting telecom photon emitters in silicon

Michael Hollenbach, Nagesh S. Jagtap, Ciarán Fowley +12

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discov…

quant-ph2021★ 2 cited

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

I. D. Breev, Z. Shang, A. V. Poshakinskiy +11

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon…

cond-mat.mtrl-sci2019★ 23 cited

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Slawomir Prucnal, Yonder Berencén, Mao Wang +19

Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…

physics.app-ph2019★ 32 cited

Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties

Mao Wang, R. Hubner, Chi Xu Yufang Xie +6

Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These p…

cond-mat.mtrl-sci2018

CMOS-compatible controlled hyperdoping of silicon nanowires

Yonder Berencén, Slawomir Prucnal, Wolfhard Möller +13

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy l…