activity
20182022
most citedWavelength-by-wavelength temperature-independent thermal radiation utilizing an insulator-metal transition

1 citations · 1 across the 1 of their papers we have counts for

collaborators

6 papers

physics.optics20221 cited

Wavelength-by-wavelength temperature-independent thermal radiation utilizing an insulator-metal transition

Jonathan King, Alireza Shahsafi, Zhen Zhang +7

Both the magnitude and spectrum of the blackbody-radiation distribution change with temperature. Here, we designed the temperature-dependent spectral emissivity of a coating to cou…

cond-mat.mtrl-sci2021

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect

Gaurab Rimal, Yiting Liu, Caleb Schmidt +14

PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, a…

cond-mat.mtrl-sci2021

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction

Aditya Sood, Xiaozhe Shen, Yin Shi +9

Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales und…

cond-mat.str-el2020

Sudden collapse of magnetic order in oxygen deficient nickelate films

Jiarui Li, Robert J. Green, Zhen Zhang +9

Oxygen vacancies play a crucial role in the control of the electronic, magnetic, ionic, and transport properties of functional oxide perovskites. Rare earth nickelates (RENiO$_{3-x…

physics.optics2019

Optical properties of thin-film vanadium dioxide from the visible to the far infrared

Chenghao Wan, Zhen Zhang, David Woolf +13

The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of o…

cond-mat.mes-hall2018

Strongly correlated proton-doped perovskite nickelate memory devices

Koushik Ramadoss, Fan Zuo, Yifei Sun +8

We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching spee…