45 citations · 168 across the 7 of their papers we have counts for
8 papers
Robust watt-level continuous-wave deep-ultraviolet lasers near 230 nm
J. Cai, M. Stoepper, P. Agarwal +20
Continuous-wave (CW) deep-ultraviolet (DUV) lasers near 230~nm enable laser cooling of AlF, Cd, and Zn, but second-harmonic generation below 237~nm relies in practice on beta-bariu…
Strain-free GaSb quantum dots as single-photon sources in the telecom S-band
Johannes Michl, Giora Peniakov, Andreas Pfenning +7
Creating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes has been of high inter…
Widely tunable 2 m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector
Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala +3
Tunable lasers emitting at a 2-3 m wavelength range and compatible with photonic integration platforms are of great interest for sensing applications. To this end, combining GaS…
Watt-level blue light for precision spectroscopy, laser cooling and trapping of strontium and cadmium atoms
Jonathan N. Tinsley, Satvika Bandarupally, Jussi-Pekka Penttinen +5
High-power and narrow-linewidth laser light is a vital tool for atomic physics, being used for example in laser cooling and trapping and precision spectroscopy. Here we produce Wat…
Epitaxial phases of high Bi content GaSbBi alloys
Joonas Hilska, Eero Koivusalo, Janne Puustinen +2
GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. Th…
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off
F Cappelluti, D Kim, M van Eerden +11
We report thin-film InAs/GaAs quantum dot (QD) solar cells with deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch w…
Field emission from self-catalyzed GaAs nanowires
Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo +5
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-…
Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique
Eero Koivusalo, Teemu Hakkarainen, Mircea Guina
Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of temp…