4 papers
Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Dirk König, Michael Frentzen, Daniel Hiller +9
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscal…
Analytic Description of Cross Sections for Regular Forms of Zincblende- and Diamond-Lattice Nanowires
Dirk König
Semiconductor nanowires (NWires) experience stress and charge transfer by their environment and impurity atoms. In return, the environment of NWires experiences a NWire stress resp…
Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide
Dirk König, Daniel Hiller, Sebastian Gutsch +2
All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omniprese…
Number Series of Atoms, Interatomic Bonds and Interface Bonds Defining Zinc-Blende Nanocrystals as Function of Size, Shape and Surface Orientation: Analytic Tools to Interpret Solid State Spectroscopy Data
Dirk König
Semiconductor nanocrystals (NCs) experience stress and charge transfer by embedding materials or ligands and impurity atoms. In return, the environment of NCs experiences a NC stre…