9 papers
Complete measurement of tunnel- and valley-coupling parameters in a silicon double quantum dot
Daniel J. King, Minyoung Kim, J. Reily +4
Tunneling is essential in the initialization, measurement, and control of quantum dot qubits. In silicon, such tunneling connects not only the qubit states but also valley minima i…
High-fidelity EDSR in Si/SiGe Wiggle Wells
Hudaiba Soomro, Minyoung Kim, Avani Vivrekar +3
Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have been shown to enhance the Dresselhaus spin-orbit coupling of conductio…
Individually tunable Si/SiGe quantum dot operating voltages via gate-biased illumination
Jared Benson, Sanghyeok Park, Owen M. Eskandari +6
Semiconductor quantum dot qubits often require very different voltages on each gate to bring them to a correct operating point. Here, we present a method by which one can controlla…
Large quantum dot energy level shifts in anomalous photon-assisted tunneling
Jared Benson, C. E. Sturner, A. R. Huffman +12
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. Howev…
Direct measurement of the energy spectrum of a quantum dot qubit
J. Reily, Daniel J. King, Jonathan C. Marcks +8
The mapping between gate voltages applied to a double quantum dot, and the parameters of a Hubbard-like Hamiltonian, is of utmost importance for understanding and operating spin qu…
Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
Róbert Németh, Vatsal K. Bandaru, Pedro Alves +7
Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; howeve…