9 papers
Complete measurement of tunnel- and valley-coupling parameters in a silicon double quantum dot
Daniel J. King, Minyoung Kim, J. Reily +4
Tunneling is essential in the initialization, measurement, and control of quantum dot qubits. In silicon, such tunneling connects not only the qubit states but also valley minima i…
High-fidelity EDSR in Si/SiGe Wiggle Wells
Hudaiba Soomro, Minyoung Kim, Avani Vivrekar +3
Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have been shown to enhance the Dresselhaus spin-orbit coupling of conductio…
Large quantum dot energy level shifts in anomalous photon-assisted tunneling
Jared Benson, C. E. Sturner, A. R. Huffman +12
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. Howev…
Direct measurement of the energy spectrum of a quantum dot qubit
J. Reily, Daniel J. King, Jonathan C. Marcks +8
The mapping between gate voltages applied to a double quantum dot, and the parameters of a Hubbard-like Hamiltonian, is of utmost importance for understanding and operating spin qu…
Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout
Piotr Marciniec, M. A. Wolfe, Tyler Kovach +9
A common method for reading out the state of a spin qubit is by latching one logical qubit state, either or , onto a different, metastable charge state. Such…
Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Collin C. D. Frink, Talise Oh, E. S. Joseph +5
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced p…